PART |
Description |
Maker |
CY7C1049CV33 CY7C1049CV33-15ZXC CY7C1049CV33-10VC |
4-Mbit (512K x 8) Static RAM 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44 512K x 8 Static RAM 12k × 8静态RAM 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
CAT25C65SA-1.8TE13 CAT25C65SA-TE13 CAT25C65SE-1.8T |
32K/64K-Bit SPI Serial CMOS EEPROM 32K/64K-Bit SPI串行EEPROM中的CMOS Light Pipe; Mounting Hole Dia:3.5mm; Material:Polycarbonate; Length:10.2mm; Color:Clear; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes LIGHT PIPE VERTICAL .350 ROUND Light Pipe; Mounting Hole Dia:3.5mm; Material:Polycarbonate; Length:7.6mm; Color:Clear; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
|
MITSUMI ELECTRIC CO., LTD. Panasonic Industrial Solutions CATALYST[Catalyst Semiconductor]
|
AS7C4096A-12TCN AS7C4096A-15JI |
IC,AS7C4096A-12TCN,TSOP-44 II, SRAM,12NS,512K X 8,5V 512K X 8 STANDARD SRAM, 12 ns, PDSO44 512K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Alliance Memory, Inc. ALLIANCE MEMORY INC
|
GS816136CD-300IT |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PBGA165
|
GSI Technology, Inc.
|
GS8161E18BD-150 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
TC55VL818FF-75 |
512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM)
|
Toshiba Corporation
|
CY7C1012DV3307 CY7C1012DV33-8BGXC |
12-Mbit (512K X 24) Static RAM 512K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
CY62157EV30LL-45ZXI CY62157EV30LL-45BVI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IS61VF51218A-6.5B3 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18,为512k × 36,为512k × 36 35.7同步突发静态存储器 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
|